한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.357-357
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- 2010
Improved electrical characteristics of ZnO thin film transistor by annealing in nitrogen ambient
- Hwang, Yeong-Hyeon (Kwangwoon University) ;
- Kim, Min-Soo (Kwangwoon University) ;
- Lee, Se-Won (Kwangwoon University) ;
- Park, Jin-Gwon (Kwangwoon University) ;
- Jang, Hyun-June (Kwangwoon University) ;
- Lee, Dong-Hyun (Kwangwoon University) ;
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Cho, Won-Ju
(Kwangwoon University)
- 발행 : 2010.06.16
초록
The electrical characteristics of ZnO thin film transistor (TFT) were investigated. ZnO thin layer was deposited by DC sputtering method and TFTs with ZnO channel layer were fabricated. On/off current ratio and saturated drain current of fabricated devices were improved by annealing in nitrogen ambient at various temperatures. As a result, the electrical characteristics of ZnO TFT were improved by post annealing in nitrogen ambient and it is important to optimize the annealing conditions for ZnO TFT fabrication.