Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.370-370
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- 2010
Bipolar Resistance Switching Characteristics of $NiO_{1+x}$ films with Adding Higher-Valence Impurities
Abstract
The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/