한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

PLD-DBD 공정으로 제작된 비정질 Zn 산화물 박막트랜지스터의 안정성 향상

Stability enhancement of armorphous znic oxide thin film transistors fabricated by pulsed laser deposition with DBD

  • 전윤수 (한국과학기술연구원 전자재료센터) ;
  • 정유진 (한국과학기술연구원 전자재료센터) ;
  • 조경철 (한국과학기술연구원 전자재료센터) ;
  • 김승한 (한국과학기술연구원 전자재료센터) ;
  • 정다운 (한국과학기술연구원 전자재료센터) ;
  • 이상렬 (한국과학기술연구원 전자재료센터)
  • Chun, Yoon-Soo (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Chong, Eu-Gene (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Jo, Kyoung-Chol (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Kim, Seung-Han (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Jung, Da-Woon (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Lee, Sang-Yeol (Electronic Materials Center, Korea Institute of Science and Technology)
  • 발행 : 2010.06.16
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초록

The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.

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