Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)

  • 2010.06a
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  • Pages.96-96
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  • 2010
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  • 2233-9485(pISSN)
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  • 2233-9574(eISSN)
The Korean Magnetics Society (한국자기학회)
권호 표지

Single Crystalline CoFe/MgO Tunnel Contact on Nondegenerate Ge with a Proper Resistance-Area Product for Efficient Spin Injection and Detection

  • Jeon, Kun-Rok (Department of Physics and Center for Nanospinics of Spintronic Materials, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Min, Byoung-Chul (Center for Spintronics Research, Korea Institute of Science and Technology (KIST)) ;
  • Lee, Hun-Sung (Department of Physics and Center for Nanospinics of Spintronic Materials, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Shin, Il-Jae (Center for Spintronics Research, Korea Institute of Science and Technology (KIST)) ;
  • Park, Chang-Yup (Department of Physics and Center for Nanospinics of Spintronic Materials, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Shin, Sung-Chul (Department of Physics and Center for Nanospinics of Spintronic Materials, Korea Advanced Institute of Science and Technology (KAIST))
  • Published : 2010.06.10
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Abstract

We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the crystalline CoFe(5 nm)/MgO(1.5,2.0,2.5 nm)/n-Ge(001) tunnel contacts have been investigated by I-V-T and C-V measurements. Interestingly, the tunnel contact with the 2-nm MgO exhibits the ohmic behavior with low resistance-area products, satisfying the theoretical conditions required for significant spin injection and detection. This result is ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.

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