Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2011.07a
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- Pages.25-26
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- 2011
The study on the electrical characteristics of oxide thin film transistors with different annealing processes
열처리 공정에 따른 산화물 박막 트랜지스터의 전기적 특성에 관한 연구
- Park, Yu-Jin (Department of Chemical and Biochemical Engineering, Dongguk University-Seoul) ;
- Oh, Min-Suk (Flexible Display Research Center, Korea Electronics Technology Institute (KETI)) ;
- Han, Jeong-In (Department of Chemical and Biochemical Engineering, Dongguk University-Seoul)
- Published : 2011.07.20
Abstract
In this paper, we investigated the effect of various annealing processes on the electrical characteristics of oxide thin film transistors (TFTs). When we annealed the TFT devices before and after source/drain (S/D) process, we could observe the different electrical characteristics of oxide TFTs. When we annealed the TFTs after deposition of transparent indium zinc oxide S/D electrodes, the annealing process decreased the contact resistance but increased the resistivity of S/D electrodes. The field effect mobility, subthreshold slope and threshold voltage of the oxide TFTs annealed before and after S/D process were 5.83 and 4.47
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