Preparation and Characterization of Cd-Free Buffer Layer for CIGS by Chemical Bath Deposition

화학습식공정을 이용한 CIGS 태양전지용 Cd-free 버퍼층 박막 제조 및 특성 분석

  • Hwang, Dae-Kue (Daegu Gyeongbuk Institute of Science & Technology (DGIST)) ;
  • Jeon, Dong-Hwan (Daegu Gyeongbuk Institute of Science & Technology (DGIST)) ;
  • Sung, Shi-Joon (Daegu Gyeongbuk Institute of Science & Technology (DGIST)) ;
  • Kim, Dae-Hwan (Daegu Gyeongbuk Institute of Science & Technology (DGIST)) ;
  • Lee, Dong-Ha (Daegu Gyeongbuk Institute of Science & Technology (DGIST)) ;
  • Kang, Jin-Kyu (Daegu Gyeongbuk Institute of Science & Technology (DGIST))
  • Published : 2012.03.29

Abstract

In our study, we have focused on optimizing good quality of ZnS buffer layer by chemical bath deposition (CBD) from a bath containing $ZnSO_4$, Thiourea and Ammonia in aqueous solution onto CIGS solar cells. The influence of deposition parameter such as pH, deposition temperature, stirring speed played a very important role on transmission, homogeneity, crystalline of ZnS buffer layer. The transmission spectrum showed a good transmission characteristic above 80% invisible spectral region. CIGS thin flim solar cell with ZnS buffer layer has been realized with the efficiency of 14.2%.

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