전력전자학회:학술대회논문집 (Proceedings of the KIPE Conference)
- 전력전자학회 2013년도 전력전자학술대회 논문집
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- Pages.386-387
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- 2013
Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbines
- Lee, Kihyun (Department of Electrical Engineering, Chonbuk National University) ;
- Jung, Kyungsub (Department of Electrical Engineering, Chonbuk National University) ;
- Suh, Yongsug (Department of Electrical Engineering, Chonbuk National University) ;
- Kim, Changwoo (Dawonsys) ;
- Cha, Taemin (Dawonsys) ;
- Yoo, Hyoyol (Dawonsys) ;
- Park, Sunsoon (Dawonsys)
- 발행 : 2013.07.02
초록
This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of IGBT module type, IGBT press-pack type, and IGCT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral-point clamed 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that IGBT press-pack type semiconductor device has the highest efficiency and IGCT has the lowest cost factor considering the necessary auxiliary components.
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