Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)

The Korean Institute of Surface Engineering (한국표면공학회)
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The effect of negative bias stress stability in high mobility In-Ga-O TFTs

  • Jo, Kwang-Min (School of Material Science and Engineering, KyungPook National University) ;
  • Sung, Sang-Yun (School of Material Science and Engineering, KyungPook National University) ;
  • You, Jae-Lok (School of Material Science and Engineering, KyungPook National University) ;
  • Kim, Se-Yun (School of Material Science and Engineering, KyungPook National University) ;
  • Lee, Joon-Hyung (School of Material Science and Engineering, KyungPook National University) ;
  • Kim, Jeong-Joo (School of Material Science and Engineering, KyungPook National University) ;
  • Heo, Young-Woo (School of Material Science and Engineering, KyungPook National University)
  • Published : 2013.05.30
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Abstract

In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

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