Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.335-335
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- 2014
Structural and Electrical Properties of Fluorine-doped Zinc Tin Oxide Thin Films Prepared by Radio-Frequency Magnetron Sputtering
- Pandey, Rina (Interface Control Research Center, Korea Institute of Science and Technology) ;
- Cho, Se Hee (Interface Control Research Center, Korea Institute of Science and Technology) ;
- Hwang, Do Kyung (Interface Control Research Center, Korea Institute of Science and Technology) ;
- Choi, Won Kook (Interface Control Research Center, Korea Institute of Science and Technology)
- Published : 2014.02.10
Abstract
Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from
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