과제정보
연구 과제 주관 기관 : National Research Foundation of Korea (NRF)
한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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- Pages.178.1-178.1
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- 2015
Effect of TiO2 buffer layer on the electrical and optical properties of IGZO/TiO2 bi-layered films
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Gong, Tae-Kyung
(School of Materials Science and Engineering, University of Ulsan)
;
- joo, Moon hyun (School of Materials Science and Engineering, University of Ulsan) ;
- Choi, Dong-Hyuk (Dongkook Ind. Co., Ltd.) ;
- Son, Dong-Il (Dongkook Ind. Co., Ltd.) ;
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Kim, Daeil
(School of Materials Science and Engineering, University of Ulsan)
- 발행 : 2015.08.24
초록
In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.