Improving the dielectric reliability using boron doping on solution-processed aluminum oxide

  • Kim, Hyunwoo (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Nayoung (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Choi, Byoungdeog (College of Information and Communication Engineering, Sungkyunkwan University)
  • Published : 2016.02.17

Abstract

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

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