Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Potential Model for L shaped Tunnel Field-Effect-Transistor

  • Najam, Faraz (Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University) ;
  • Yu, Yun Seop (Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University)
  • Published : 2016.10.27
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Abstract

A surface potential model is introduced for L-shaped tunnel field-effect-transistor(L-TFET). Excellent agreement is obtained when model results are compared with TCAD data.

Keywords

Acknowledgement

Supported by : MOTIE(Ministry of Trade, Industry & Energy)