A Study on the Deposition of Tin Oxide Resistance Films through the Chemical Vapour Reaction Process

산화석 금속피막저항기에 관한 연구

This study has been endeavored to deposit resistance films of tin oxide on the cylindrical Pyrex glass rods. In this report, at first an outline of the film formation is described and later some electrical properities of the resistance films manufactured through new method is discussed in detail. Because the new method which is called, "Chemical Vapour Reaction Process", is not only easy to get stable resistance films, but also doesn't need vacuum systtem, it seems to be a promising fundamental process to go into flow system mass production. Electrical properties of resistance films made by the new mathod are similar to or surpassing those by provious method (for example splay method). The top data thus obtained shows that surface resistivity is 25ohm/sq. with 12 ppm in temperature coefficient of resistor. resistor.

증기반응법에 의한 산화석금속피막저항기(Tin Oxide Film Resistor)의 제법을 연구하고 이방법을 이용하여 제조한 저항피막의 전기적 성질을 관찰하였다. 이때 봉상의 파이렉스 유리(Pyrex glass rod) 표면에 산화석피막을 입혔다. 이 방법은 균질한 저항피막을 쉽게 얻을 수 있고, 진공계를 필요하지 않으므로 대량생산에 적합한 제법의 기초가 된다고 할수 있다. 본제법에 의하여 만든 제품중 표면저항 25ohm/sq에서 저항온도계수(T.C.R) 12ppm을 얻었다.