Electrical Properties of ZnTe-lnSb Heterojunctions

ZnTe-InSb Heterojunction의 전기적 특성

The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.

ZnTe-lnSb Heterojunction을 계면합금법으로 제작했다. Insb의 In이 ZnTe결정에 확산되어 계면에 고저항 ZnTe충을 성장시켜 P-i-n구조를 갖고 있으며 전류수송기구는 p형 ZnTe 가전자대로부터 고저항 ZnTe충에 주입된 Hole의 SCLC기구에 의존된다. 순방향과 역방향 전압을 인가할때 실온에서 오런지색 전 장발장이 관측되었다. The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.