The Variation of Silicon Characteristic with Radiation Damage Effects

Radiation 손상에 기인한 실리콘 특성변화

For a long life photovoltaic cell the degradation of the device characteristics with 1 MeV electron radiation must be known so as to be able to predict the life of the cell. Hence, a study was made of radiation damage effects on the bulk properties of the silicon crystal. From the results of the data, it is concluded that there appeared to be a steads rotate damage level reached in f type material.

실리콘 태양전지의 수명을 예측하기 위하여 1 MeV electron radiation으로 인한 실리콘 손상을 조사 연구하였다. 그 결과 흑형 실리콘에 있어서는 거의 안정상태의 손상에 이르렀음을 보았다.