Abstract
This paper discusses the application of Si-Borosilicate glass sealing to a new sealing method which utilizes a large electrostatic field to pormote bound formation at relatively low temperature. Bonding mechanism and the effect of bonding time bonding temperature glass thickness and surface roughness on the bond strength were investigated. Application of a de voltage across bonded specimen gradually produced a layer of glass adjacent silicon which was depleted of mobile ions. As a consequence a n increasingly larger fraction of the applied voltage appeared across the depleted region and very large electric field resulted This field accompanyed by large electrostatic force acted as driving force the of strong bond. And stronger bond was formed with increasing bonding time and temperature. A low temperature preoxidation is advantageous for the Si surface having a rougher surface finish that 1 microinch.