Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 22 Issue 4
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- Pages.51-58
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- 1985
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- 1016-135X(pISSN)
A Study on the Threshold voltage and I-V Characteristics in the Ion-implanted Short channel E-IGFET(II)
Ion-Implanted short Channel E-IGFET의 Threshold 전압과 I-V특성에 관한 연구(II)
- Son, Sang-Hui (Dept. of Electronic Engineering, Hanyang University) ;
- Kim, Hong-Bae (Dept. of Semiconductuo Eng. Cheongju University) ;
- Gwak, Gye-Dal
- Published : 1985.04.01
Abstract
A simple model for the impurity profile in an ion-implanted channel layer of an enhance-ment type IGFET is assumed and a simple expression for the threshold voltage is derived by the assumed impurity profile. In application, the concept of correction factor K is used and the value of threshold voltage is well agreed with experimental value. Also, 1-V character-istics curve is well agreed with experimental value. In addition, this program is packaged and is utilized.
Ion-implanted E-IGFET의 도핑 profile을 임의로 가정하여 threshold 전압을 구하였고. short-channoel에 적용할 때 correction factor K의 개념을 사용하였다. Threshold전압의 이론치는 실험치와 잘 일치하였고, 또한 I-V특성도 실험치와 잘 일치하였다. 아울러 이 program을 package화 하여 실용화시켰다.
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