Silicon Single Crystal Growth by Vertical Bridgman-Stockbarger Method

Vertical Bridgman-Stockbarger법에 의한 Silicon 단결정 성장

  • 심광보 (한양대학교 무기재료공학과) ;
  • 오근호 (한양대학교 무기재료공학과)
  • Published : 1985.02.01

Abstract

Silicon single crystals were grown bynon-seeded vertical Brdgmen-Stockbarger technique. Optimum growth rate appeared 5mm/hr in the system. It was identified that the preferential orientation using by the optical microscope resulted in <100> direction.

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References

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