Crystal Growth of Sapphire

Sapphire 결정성장

  • 최종건 (한양대학교 무기재료공학과) ;
  • 오근호 (한양대학교 무기재료공학과) ;
  • Published : 1986.01.01

Abstract

By the floating zone method with infrared radiation convergence type heater homogeneously $Cr^{3+}$ doped alu-mina single crystal was obtained. And sizx {1010} facets appeared at the surface of [0001] grown crystals. $ZrO_2$ and $HfO_2$ precipitated as secondary phase and were not doped in the crystals. We found that the dist-ribution of the secondary phase which was mainly located at the surface and the peripheral region was closely related to the flow pattern of melt zone.

Keywords

References

  1. Zone melting(second edition) William G. Ptann
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  3. J.of Cryst.Growth v.50 Quantitative photo-elastic measurement of residual stress in LEC grown GaP crystals H. Kotake;K. Hirahara;M. Watanabe
  4. J of Cryst Growth v.44 Evaluation of yttrium iron garnet single crystals grown by floating zone method S. Kimura;I. Shindo;K. Kitamura;Y. Mori;H. Takamizawa