Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Planarization Effect of Steam Densified BPSG Film in HCl Atmosphere

HCl분위기에서 증기열처리된 BPSG 막의 평탄화효과에 관한 연구

  • 김동현 (삼성반도체통신 연구소)
  • Published : 1986.04.01
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Abstract

Phosphosilicate glass(PSG) films have been used as fusable deposited dielectrics in silicon gate MOS integrated circuits. But in this experiment BPSG(borophosphosilicate glass) will be optimized for more efficient utilization of the reactants. The BPSG films were deposited on silicon wafers by the oxidation of the hydrides at 430$^{\circ}$C in conventional atmospheric-pressure chemical-vapor-deposition (CVD) systems. Physical and chemical properties of CVD BPSG films have been characterized both for as-deposited and for fused films The. relationship between deposited BPSG film composition and infra-red absorption solution etch rate and fusion temperature is discussed and examples of BPSG composition that can be fused at 900~95$0^{\circ}C$ and 800~85$0^{\circ}C$ are given. In addition to having lower fusion temperature than PSG films BPSG films have lower as-deposited intrinsic tensile stress and low aqueous chemical etch rate they have been considered for applications where these characteristics are advantageous.

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References

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