대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

MBE에 의한 GaAs 에피택셜 성장(II)

GaAs Epitaxial Layer Grown by MBE (II)

  • 강태원 (동국대학교 물리학과) ;
  • 이재진 (동국대학교 물리학과) ;
  • 김영함 (동국대학교 물리학과) ;
  • 김진황 (동국대학교 물리학과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Kang, Tae Won (Dept. of Physics, Dongguk Univ.) ;
  • Lee, Jae Jin (Dept. of Physics, Dongguk Univ.) ;
  • Kim, Young Ham (Dept. of Physics, Dongguk Univ.) ;
  • Kim, Jin Hwang (Dept. of Physics, Dongguk Univ.) ;
  • Kim, Bong Ryul (Dept. of Elec. Eng., Yonsei Univ.)
  • 발행 : 1986.03.01
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초록

In this paper, we show that the growth rate of MBE GaAs epitaxial layer is controlled entirely by the flux density of the Ga beam, impinging on the substrate surface, and is linearly proportional to the Ga effusion cell temperature and the growth time. According to our investigation of the epitaxial layer surfvace through RHEED, AES, SIMS and SEM, if the growth temperature is maintained above 590\ulcorner, the surface crystal structure, flathness and stoichiometry become significantly enhanced, and the epilayer surface has a smooth mirror-like appearance.

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