Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 23 Issue 6
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- Pages.780-788
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- 1986
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- 1016-135X(pISSN)
CW Operation of $1.3{$mu}$ GaInAsP/p-InP BH Lasers at Room Temperature
$1.3{$mu}$ GaInAs P/p-InP BH형 레이저의 상온 연속발진
- Yoo, Tae Kyung (Dept. of Elec. Eng., KAIST) ;
- Chung, Gi Oong (Dept. of Elec. Eng., KAIST) ;
- Kwon, Young Se (Dept. of Elec. Eng., KAIST) ;
- Hong, Tchang Hee (Dept. of Electron. Comm., Korea Maritime Univ.)
- 유태경 (한국과학기술원 전자공학과) ;
- 정기웅 (한국과학기술원 전자공학과) ;
- 권영세 (한국과학기술원 전자공학과) ;
- 홍창희 (한국해양대학 전자통신공학과)
- Published : 1986.06.01
Abstract
1.3\ulcorner GaInAsP BH(Buried Heterostructure) lasers were fabricated on the p-InP substrate. Two step chemical etching processes and melt-back etching technique during 2nd epitaxy were used for BH active layer. BH laser had the threshold current, Ith, of 72mA(23\ulcorner), peak wavelength of 1.2937\ulcorner, nd of 10-20%, and To of 85K. They operated in single mode under pulse condition up to 1.4 Ith. CW(DC) operation was successfully performed at room temperature.
Keywords