Effect of Supersaturation on Morphology of Silicon Carbide Deposits

SiC 증착물의 형상에 미치는 과포화도의 영향

The effect of supersaturation on morphology of silicon carbide by chemical vapor deposition using $CH_3SiCl_3-H_2$ gas mixture system was investigated. The experimental results show that the final structure of silicon carbide deposits is coarser as total pressure increases or ${\alpha}$-ratio decreases. It is believed because supersataration of Si-source decreases as total pressure increases or ${\alpha}$-ratio decreases.