Fabrication and Characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS Solar Cells

$Ta_2O_5/Al/SiO_2/P-Si$ MIS형(形) 태양전지(太陽電池)의 제작(製作)과 특성(特性)

  • Published : 1986.11.30

Abstract

The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.

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