Properties and Thermal Stability of PECVD a-$SiN_x$:H Films.

PECVD a-$SiN_x$:H 박막(薄膜)의 특성(特性)과 열적안정성(熱的安定性)

The PECVD $SiN_x:H$ films were made from the $SiH_4-N_2$ gas mixtures under such deposition conditions as 0.01 to 1.0 of $SiH_4/N_2$ volume ratio, 0.1 to $0.8W/cm^2$ of RF power, and 100 to $400^{\circ}C$ of substrate temperature. The deposition rate, refractive index, hydrogen concentration, N/Si composition, optical gap and electric conductivity were measured, and the thermal stability and the optimum deposition conditions were investigated for the application of these films to the solar cell materials.