Single Crystal Growth of Sapphire by Flux Method

융제법에 의한 Sapphire 단결정 성장에 관한 연구

  • Cho, B.G. (Dept. of Inorganic Materials Eng. Hanyang Univ) ;
  • Joo, K. (Dept. of Inorganic Materials Eng. Hanyang Univ) ;
  • Orr, K.K. (Dept. of Inorganic Materials Eng. Hanyang Univ) ;
  • Choi, J.K. (Dept. of Inorganic Materials Eng. Hanyang Univ) ;
  • Kim, D.W. (Central Research Institute of Korea Chemical Company Ltd) ;
  • Kang, W.H. (Research and Development Center of SamSung Corning Company Ltd)
  • 조병곤 (한양대학교 무기재료공학과) ;
  • 주경 (한양대학교 무기재료공학과) ;
  • 오근호 (한양대학교 무기재료공학과) ;
  • 최종건 (한양대학교 무기재료공학과) ;
  • 김대웅 (고려화학(주) 중앙연구소) ;
  • 강원호 (삼성코닝(주) 연구소)
  • Published : 1988.02.01

Abstract

Single crystals of sapphire were grown from solution by slow cooling method using B2O3 and PbO as flux agents. The morphology of grown crystals was tube, rhombohedral, or hexagonal-plate. It was found that the morphology and the size of grown crystal were highly dependent on the amount of fluxes in the solution, the ratio of B2O3 vs. PbO, and cooling rate.

Keywords

References

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