Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Hot-carrier Induced MOSFET Degradation and its Lifetime Measurement

Hot-carrier 효과로 인한 MOSFET의 성능저하 및 동작수명 측정

  • 김천수 (한국전자통신연구소 신뢰성연구실) ;
  • 김광수 (한국전자통신연구소 신뢰성연구실) ;
  • 김여환 (한국전자통신연구소 신뢰성연구실) ;
  • 김보우 (한국전자통신연구소 신뢰성연구실) ;
  • 이진효 (한국전자통신연구소 신뢰성연구실)
  • Published : 1988.02.01
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Abstract

Hot carrier induced device degradation characteristics under DC bias stress have been investigated in n-MOSFETs with channel length of 1.2,1.8 um, and compared with those of LDD structure device with same channel length. Based on these results, the device lifetime in normal operating bias(Vgs=Vds=5V) is evaluated. The lifetimes of conventional and LDD n-MOSFET with channel length of 1.2 um are estimated about for 17 days and for 12 years, respectively. The degradation rate of LDD n-MOSFET under the same stress is the lowest at n-region implnatation dose of 2.5E15 cm-\ulcorner while the substrate current is the lowest at the dose of 1E13cm-\ulcorner Thses results show that the device degradation characteristics are basic measurement parameter to find optimum process conditions in LDD devices and evaluate a reliability of sub-micron device.

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