Rapid와 conventional Alloying 공정에 의한 GaAs Ohmic Contact의 특성 비교연구와 TLM의 새로운 해석 방법의 제안

Comparison Studies on GaAS Ohmic Contacts Fabricated by Rapid and Conventional Alloying Process and New Analysis Method of TLM Patterns

Ohmic contact process for the fabrication of GaAs integrated circuits is very important. Specific contact resistivities, assuming Rsm=Rs, were measured after the rapid and the conventional alloying process, respectively. The results show that the characteristics of ohmic contact through the rapid alloying process is much better (Apc=1.3~3.3x10**-7 \ulcorner-(m\ulcorner. This is probably due to intensive and compound energy densities during the rapid alloying process. New analysis method of TLM patterns viz. measurements of normlaized specific contact resistivities are proposed to reduce measurement errors that could occur when measuring the small contact end resistances. The adoption of rapid alloying process for the mass production of GaAs integrated circuits could greatly reduce the total processig time.