Chemical Vapor Deposition of Diamond Film from Methane-Hydrogen Gas in Microwave Plasma

마이크로웨이브 플라즈마에서 메탄-수소가스로부터 다이아몬드박막의 화학증착

  • 이길용 (포항공과대학 재료금속공학과) ;
  • 제정호 (포항공과대학 재료금속공학과)
  • Published : 1989.03.01

Abstract

In this study, it was tried to deposit diamond films from a mixture of CH4 and H2 by the microwave plasma chemical vapor deposition(MWCVD). The MWCVD process was designed and set up from the 2.45GHz microwave generator. And the diamond film was successfully deposited on silicon wafers from the mixture of methane and hydrogen. The microstructures of the deposited diamond films were studied by using the following deposition variables : (a) methane concentration(0.6-10%), (b) reaction pressure(10-100torr), and (c) the substrate temperature(450-76$0^{\circ}C$).

Keywords

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