Sapphire Ribbon Single Crystal Growth by EFG Method

EFG법에 의한 Sapphire Ribbon 단결정 성장

  • 박신서 (한양대학교 무기재료공학과) ;
  • 류두형 (한양대학교 무기재료공학과) ;
  • 정재우 (한양대학교 무기재료공학과) ;
  • 최종건 (한양대학교 무기재료공학과) ;
  • 오근호 (한양대학교 무기재료공학과) ;
  • 손선기 (남성세라믹 기술연구소) ;
  • 변영재 (남성세라믹 기술연구소) ;
  • 전형탁 (남성세라믹 기술연구소)
  • Published : 1990.06.01

Abstract

Shaped crystal growth apparatus were made for sapphire ribbon single crystal growth. Sapphire ribbon single crystal are grown by EFG(Edge-defined Film-fed Growth) methdo for use as watch-glass and SOS(Silicon-On-Sapphire) devices. Sapphire ribbon crystals were grown to be 40min wide, 1.8mm thick, 96mm long. Therelationshiops between growth striation and surface roughness, with various growth rates, were investigated and compared. It was found that sapphire ribbon crystal is suitable for watch-glass by measuring the transmittance in the visible light region.

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References

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