Fabrication of the Split Drain Type Magnetic Sensitive MOSFETs and Its Properties

드레인 분리형 자기감지기의 제조 및 특성

  • Published : 1990.12.01

Abstract

The electromagnetic properties of P- and n-channel split drain magnetic sensitive MOSFET fabricated using 2\ulcorner design rules and CMOS process technology has been investigated. The achieved output voltage in the double drain MOSFET was 160mV at 10\ulcorner drain current and magnetic flux density of 10kG, and the sensitivity was 1.6x10**3 V/A\ulcornerG. A further higher sensitivity was obtained by introducing a third drain in the split region. In this case, the triple drain MOSFET showed a much higher sensitivity of 2x10**3 V/A\ulcornerG under the same condition. Also, the linearity of output voltage vs. magnetic flux density was excellent.

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