Hydrothermal Growth of $GaPO_{4}$ Single Crystals in HCI Solution

The hydrothermal growth of $GaPO_{4}$ Single Crystals was carried out by the horizontal temperature gradient method. The most promising solvents for the crystal growth of $GaPO_{4}$ are $H_{3}PO_{4}$ and HCl solutions. Single crystals have been hydothermally grown at temperatures over the range $210-290^{\circ}C$ in these solutions with seed crystals. The glowth rates in HCl solution were higher than that for comparable conditions in $H_{3}PO_{4}$ solution. Morphologies of crystals grown at temperatures below $200^{\circ}C$ tended to be bounded by small major rhombohedral(10$\bar{1}$1) faces. In the temperature range from 200 to $430^{\circ}C$, the single crystals have morphologies bounded by prism (10$\bar{1}$0), small major rhombohedral(10$\bar{1}$1) and minor rhombohedral(01$\bar{1}$1) faces at the early stage, and grew with well developed basal(0001) faces by increasing the growth temperature.