Electrical Properties of Low-Temperature Sintered BaTiO3 Added with Lead Germanate

Lead Germanate를 첨가하여 저온소결한 반도성 BaTiO3의 전기적 성질

  • 윤상옥 (강릉대학교 재료공학과) ;
  • 정형진 (한국과학기술연구원 세라믹스부) ;
  • 윤기현 (연세대학교 요업공학과)
  • Published : 1991.06.01

Abstract

Electrical properties of 0.15 mol% Y2O3 doped semiconducting BaTiO3 ceramics have been investigated as functions of Pb5Ge3O11 contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 1150$^{\circ}C$ to 1300$^{\circ}C$). The low-temperature sintered BaTiO3 ceramics above 1150$^{\circ}C$ show increase of Curie temperature due to the diffusion of Pb+2 ions, and their PTCR effects decrease. As the sintering temperature increases the room temperature resistance decreases due to the growth of the grain, but the room temperature resistance increases with the increase of the Pb5Ge3O11 contents by the formation of thick insulating layers at the grain boundary.

Keywords

References

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