PTCR Effects of Semiconducting (Ba1-xPbx)TiO3 Ceramics with 0.5 mol% Pb5Ge3O11

0.5 mol% Pb5Ge3O11가 첨가된 반도성 (Ba1-xPbx)TiO3 세라믹스의 PTCR 효과

  • 윤상옥 (강릉대학교 재료공학과) ;
  • 정형진 (한국과학기술연구원 세라믹스부) ;
  • 윤기현 (연세대학교 요업공학과)
  • Published : 1991.07.01

Abstract

The effects of 0.15mol% Y2O3 doped semiconducting (Ba1-xPbx)TiO3 ceramics with 0.5 mol% Pb5Ge3O11 as sintering additives have been investigated as function of Pb contents (from 0.05 mol to 0.3 mol) and sintering temperatures (from 1050$^{\circ}C$ to 1200$^{\circ}C$). As the Pb content increases in the (Ba1-xPbx)TiO3 system, the size and resistance of the grain increase but the capacitance of the grain boundary decreases due to the formation of liquid phase during the sintering. And with increasing the sintering temperatures, the resistance of the grain decreases but the capacitance of the grain boundary increases. The PTCR effects decrease with increasing the Pb content and the sintering temperature.

Keywords

References

  1. German Patent 929,350 Method of Preparation of Semicunducting Materials P.W. Haayman;R.W. Dam;H.A. Klasens
  2. Electronic Appl. v.26 no.3 Properties and Application of PTC Thermistors E. Andrich
  3. Ceramic Age. v.May no.44 Properties and Application of PTC Thermistors P.D. Levett
  4. Philips Res. Rep. v.5 no.6 Controlled Valency Semiconductors E.J.W. Verwey;P.W. Haayman(et al.)
  5. J. Am. Ceram. Soc. v.47 no.100 Resistivity Anomaly in Doped Barium Titanates W Heywang
  6. Solid State Electron. v.7 no.12 Some Aspects of Semiconducting Barium Titanates G.H. Jonker
  7. J. Am. Ceram. Soc. v.44 no.2 Semiconducting Bodies in the Family of Barium Titanates O. Saburi
  8. Am Ceram. Soc. Bull. v.42 no.5 Ytrrium Doped Ferroelectric Solid Solutions with Positive Temperature coefficient of Resistivity Y. Ichikawa;W.G. Calson
  9. J. Am. Ceram. Soc. v.66 no.11 PTCR Characteristics in Barium Titanate Ceramics with Curie Point Between 60℃ and 360℃ M. Kuwabara;K. Kunamoto
  10. J. Kor. Ceram Soc. v.28 no.5 Low-Temperature Sinterbility of Semiconducting BaT₁O₃ Ceramics with $Pb_5Ge_3O_11$Additives S.O. Yoon;K.H. Yoon;H.J. Jung
  11. J Kor. Ceram. Soc. Electrical Properties of Low-Temperature Sintered BaTiO₄ Added Lead Germanate S.O. Yoon;K.H. Yoon;H.J. Jung
  12. J. Electrochem. Soc. v.107 Ohmic Contacts to Semiconducting Ceramics D.R. Turner;H.A. Sauer
  13. Solid State Comm. v.64 no.4 Contact Resistance of the Electrodes on Semiconductive Ceramics S.O. Yoon;H.J. Jung;K.H. Yoon
  14. Mat. Res. Bull. v.21 no.12 Influence of Synthesis Methods of the PTCR Effece in Semiconductive BaTiO₃ K.H. Yoon;K.Y. Oh;S.O. Yoon
  15. Am Ceram. Soc. Bull. v.62 no.2 Low-Firing Capacitor Dielectrics in the System Pb($Fe_{2/3}W_{1/3})O₃-Pb($Fe_{1/2}Nb_{1/2}$)O₃-$Pb_5Ge_3O_11$ S.J. Jang;W.A. Schulze;J.V. Biggers
  16. Mat. Res. Bull. v.14 no.5 Piezoelectric Properties of $Pb_5Ge_3O_11$ Bonded PZT Composites W.A. Schulze;J.V. Biggers
  17. Low Temperature Sintering and Electrical Porperties of Semiconducting BaTiO₃ Ceramics and Interfacial Analysis by the Complex Impedance Resonance Method S.O. Yoon
  18. Proc. of .the 2nd Symp. on Elcetro. Ceram. A Interface Analytical Method by Electrical Property in a Semiconducting Ceramics S.O. Yoon;H.J. Jung;K.H. Yoon
  19. J. Appl. Phys. Jpn. v.6 no.4 On the Phase Transitions in Barium Lead Titanate G. Shirane;K. Suzuki
  20. J. Kor. Ceram. Soc. v.24 no.1 Effect of MoO₃ Addition and Their Frequency Characteristics in $Nb^{+5}$ Doped Semiconductive BaTiO₃ Ceramics S. O. Yoon;H. J. Jung;K. H. Yoon