A Study on the Characteristics of PSA Device using RTA Process and Trench Technology

RTA 공정 및 Trench 격리기술을 사용한 PSA 바이폴라 소자의 특성 연구

  • Koo, Yong-Seo (Electronics and Telecommunication Research Institute) ;
  • Kang, Sang-Won (Electronics and Telecommunication Research Institute) ;
  • An, Chul (Dept. of Elec. Eng., Sogang Univ.)
  • 구용서 (한국전자통신연구소) ;
  • 강상원 (한국전자통신연구소) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 1991.09.01

Abstract

This paper presents the 1.5\ulcorner PSA bipolar device which establishes the performance improvement such as the reduction of emitter resistance and substrate junction capacitance. To achieve the above electrical characteristics, RTA process and trench isolation technology were adapted. The emitter resistance and substrate capacitance of npn transistor having 1.5$[\times}6{\mu}m^{2}$emitter area was measured with 63$\Omega$and 28fF, respectively. The minimum propagation delay time shows 121ps at 0.7mW from the measurement of 31 stage ring oscillator.

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