Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

The Behavior of $BF_2$ Implanted Single Crystalline Si Substrates During the Formation of $TaSi_2$

$TaSi_2$ 형성시 단결정 실리콘 기판에 이온주입된 $BF_2$의 거동

  • 조현춘 (한양대학교 재료공학과) ;
  • 양희준 (한양대학교 재료공학과) ;
  • 최진석 (한양대학교 재료공학과) ;
  • 백수현 (한양대학교 재료공학과)
  • Published : 1991.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

TaSi$_2$ was formed by rapid thermal annealing(RTA) on BF$_2$ doped single crystalline silicon substrates. The formation and various properties of TaSi$_2$ have been investigated by using 4-point probe, HP414, XRD, and SEM. And the redistribution of boron with RTA has been observed by SIMS. Implanted boron was diffused out into the TaSi$_2$ for RTA temperature but did not significantly affect the formation temperature of TaSi$_2$. Also, the contact resistance for TaSi$_2$/p$^{+}$ region had a low value 22$\Omega$, at contact size of 0.9$\mu$m, and the native oxide formed on Si-substrates by BF$_2$ implantation retarded the formation of TaSi$_2$.

Keywords