Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 28A Issue 5
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- Pages.375-379
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- 1991
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- 1016-135X(pISSN)
High-Resolution TEM Study on TiAs Precipitate Formation Between $TiSi_2$ and As Doped in Poly-Silicon
$TiSi_2$ 와 다결정 실리콘에 이온주입된 As 계에서 TiAs 침전물형성에 관한 고분해능 TEM 연구
Abstract
Formation of TiAs precipitate through the reaction between TiSi2 with C54 structure and heavily doped arsenic ion in poly-silicon, and influence of TiSAs and silicon distribution resulted from the reaction TiSi2+As ->2Si on the morphology degradation have been studied.
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