Electrical Characteristics and Microstructure Control of Zinc Oxide Viaristors

ZnO 바리스터의 미세구조제어와 전기적 특성

  • Kim, Gyeong-Nam (Dept. of Materials Engineering, Kangwon National Univ.) ;
  • Han, Sang-Mok (Dept. of Materials Engineering, Kangwon National Univ.)
  • 김경남 (강원대학교 재료공학과) ;
  • 한상목 (강원대학교 재료공학과)
  • Published : 1991.08.01

Abstract

The effect of inclusion particles on the microstructure development and electrical characteristics in the systems $ZnO-Bi_2O_3-CoO-Sb_2O_3\;and\;ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3 were investigated. The growth of ZnO grains, which was controlled by the spinel particles during sintering, decreased with increasing amount of spinel particles. Addition of $Cr_2O_3(0.5mol\%) increased the breakdown voltage without affecting the non-linear characteristics. The calculated barrier voltage of the $ZnO-Bi_2O_3-CoO-Sb_2O_3\;-and\;ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3$ systems were about 3.1V and 2.9V, respectively.

$ZnO-Bi_2O_3-CoO-Sb_2O_3$$ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3$계에서 미세구조 변화 및 전기적 특성에 미치는 개재물의 영향을 조사하였다. 소결동안에 ZnO입자 성장은 스피넬 입자들에 의해 제어되었으며, 스피넬 입자들의 양의 증가에 의해 입자성장은 감소하였다. $Cr_2O_3(0.5mol\%)$의 첨가는 비직선성지수에는 큰 영향을 미치지 못하였으며 임계전압(breakdown voltage)을 증가시켰다. 계산에 의해 구한 장벽전압은 $ZnO-Bi_2O_3-CoO-Sb_2O_3$$ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3$ 계에서 각각 3.1V와 2.9V이었다.

Keywords

References

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