References
-
J. Electrochem Soc.: Solid-State Science and Technology
v.130
no.12
Leakage-Current Increase in Amorphous
$Ta_2O_5& Films due to Pinhole Growth during Annealing below 600°℃ S. Kimura;Y. Nishioka;A. Shintani;K. Mukai - J. Appl. Phys. v.54 no.11 Electrical Properties of Amorphous Tantalum Pentaoxide Thin Films on Silicon G.S. Oehrlein;A. Reisman
- J. Appl. Phys. v.55 no.10 Some Properties of Crystallized Tantalum Pentaoxide Thin Films on Silicon G.S. Oehrlein;F.M. d'Heurle;A. Reisman
- Appl. Phys. Lett. v.56 no.10 Effect of Ozone Annealing on the Dielectric Properties of Tantalum Oxide Thin Films Grown by Chemical Vapor Deposition C. Isobe;M. Saitoh
-
J. Appl. Phys.
v.65
no.3
Conduction Mechanisms in Sputtered
$Ta_2O_5$ on Si with an Interfacial SiO₂Layer S. Banerjee -
J. Appl. Phys.
v.59
no.5
OxidationTemperature Dependence of the dc Electrical Conduction Characteristics and Dielectric Strength of Thin
$Ta_2O_5$ Films on Silicon G.S. Oehrlein -
J. Electrochem. Soc.: Solid-State Science and Technology
v.135
no.10
Interfacial Oxidation of Silicon Substrates through
$Ta_2O_5$ Films T. Kato;T. Ito - 대한전자공학회지 v.17 no.4 차세대 기억소자의 캐패시터 형성기술 이경수;이병헌
- Mat. Res. Soc. Symp. Proc. v.73 Characterization of Sol-Gel Derived Tantalum Oxide Films L.A. Silverman;G. Teowee;D.R. Uhlmann
-
J. Electrochem. Soc.: Solid-State Science and Technology
v.134
no.2
Dielectric Characteristics of Double Layer Structure of Extremely Thin
$Ta_2O_5SiO_2$ on Si Y. Nishioka;S. Kimura;H. Shinriki;K. Mukai