Preparation and Analysis of the SOG Films

스핀-온-글라스 박막의 제조와 분석

  • 임경란 (한국과학기술연구원 세라믹스 공정연구실) ;
  • 최두진 (연세대학교 세라믹공정과) ;
  • 박선진 (한국과학기술연구원 세라믹스 공정연구실)
  • Published : 1992.11.01

Abstract

A SOG(spin glass) solution with excellent wetting to Si wafers was prepared by acid-hydrolysis of Si(OEt)4 and Me2Si(OEt)2. The solution was spin coated on Si wafers, and effects of heat treatment of the film were characterized by TG/DTA, FTIR and Ellipsometry. Silica film was obtained by heat treatment at $600^{\circ}C$ within one hour, but heat treatment at 80$0^{\circ}C$ caused interfacial oxidation of the silicon substrate. Unexpectedly silica films with much better adhesion were obtained by curing at $600^{\circ}C$ for over 30 min. than those obtained by thermal oxidation.

Keywords

References

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