Analysis of the Resonant Tunneling in an AlGaAs/GaAs Single Quantum Well Structure by an Airy Function Approach

AlGaAs/GaAs 단일양자 우물 구조에서 Airy 함수를 이용한 공명터널링 현상에 관한 고찰

  • 김성진 (고려대학교 전기공학과) ;
  • 이경윤 (삼성전자 반도체부문 부천연구소) ;
  • 이헌용 (명지대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1992.01.01

Abstract

The analysis of the resonant tunneling based on the exact solution of Schrodinger equations is performed in a single quantum well structure under applied bias. The transmittivity and the net tunneling current density are calculated with Airy function and the boundary conditions which is suggested by Bastard. The results are compared with those from other methods and boundary conditions. From the calculated J-V characteristics for the tunneling current, the dependence of the voltage location showing the first peak current on the various temperatures and Fermi level is investigated. In addition, the wave function within the structure is obtained and compared with that from the flat-potential model.

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