Observation of Oxide Film Formed at Si-Si Bonding Interface in SFB Process

SFB 공정시 Si-Si 집합 계면에 형성되는 산화막의 관찰

  • 주병권 (한국과학기술원 광전기술센터) ;
  • 오명환 (한국과학기술원 광전기술센터) ;
  • 차균현 (고려대학교 전자공학과)
  • Published : 1992.01.01

Abstract

In SFB Process, after 110$0^{\circ}C$ annealing in wet OS12T(95$^{\circ}C$ HS12TO bubbling) atmosphere, the existence of the interfacial oxide film in micro-gap at Si-Si bonding interface was identified. The angle lapping/staining and SEM morphologies of bonding interface showed that the growing behavior of interfacial oxide made a contribution to eliminate the micro-gaps having a width of 200-300$\AA$. In case of the diodes composed of p-n wafer pairs made by SFB processes, the annealed one in wet OS12T atmosphere exhibited a dielectric breakdown phenomena of interfacial oxide at 37-40 volts d.c.

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