Abstract
Shallow $p^{+}-n,n^{+}-p$ diodes have been fabricated using rapid thermal diffusion by solid diffusion source and rapid thermal alloying with pure Aluminum. Diode area and junction depth are designed about 2.83$[\times}10^{-3}cm^{2}$ and 250nm, respectively. Electrical characteristics of $p^{+}-n$ diode show that the ideality factor is 1.04 and reverse current density is 29.3nA/$cm^{2}$, respectively. On the other hand, those of $n^{+}-p$ diode show that the ideality factor is 1.05 and reverse current density is 85.2pA/$cm^{2}$. The reverse currents are measured at 5V reverse bias after rapid thermal alloying for all the measurement.