Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of Highly Stable a-Si:H Solar Cells

안정성이 높은 수소화된 비정질 실리콘 태양전지의 제작

  • Kim, Tae-Gon (Dept. of Physics & Inst. For Basic Sciences, Kyunghee Univ.) ;
  • Park, Kyu-Chang (Dept. of Physics & Inst. For Basic Sciences, Kyunghee Univ.) ;
  • Kim, Sung-Chul (Dept. of Physics & Inst. For Basic Sciences, Kyunghee Univ.) ;
  • Jang, Jin (Dept. of Physics & Inst. For Basic Sciences, Kyunghee Univ.)
  • Published : 1992.03.01
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Abstract

We fabricated highly stable a-Si:H solar cell using low band gap intrinsic layer fabricated by RP-CVD. We obtained a-Si:H with optical band gap of less than 1.65 eV with deposition rate of 0.18 $\AA$/sec, and used this material as bottom i-layer of a-Si:H double stacked solar cells. We have succeeded in the fabrication of very stable a-Si:H double stacked solar cell of which the conversion efficiency is about 9% and the degradation is less than 4% after light illumination for 100h under 350mW/cm$^{2}$.

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