Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Characteristics of AlGaAs/GaAs Quantum-Well Delta-Doped Channel FET's by Low Pressure Metalorganic Chemical Vapor Deposition

저압 유기금속기상 성장법에 의한 AlGaAs/GaAs 양자 우물에 델타 도우핑된 채널 FET 특성

  • 장경식 (포항공과대학 전자전기공학과) ;
  • 정동호 (포항공과대학 전자전기공학과) ;
  • 이정수 (포항공과대학 전자전기공학과) ;
  • 정윤하 (포항공과대학 전자전기공학과)
  • Published : 1992.04.01
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Abstract

AlGaAs/GaAs quantum well delta-doped channel FET's have been successfully fabricated using by low-pressure metalorganic chemical vapor deposition(LP-MOCVD). The FET's with a gate dimension of 1.8$\mu$m $\times$ 100$\mu$m have a maximum transconductance of 190 mS/mm and a maximum current density of 425 mA/nm. The devices show extremely broad transconductances with a large voltage swing of 2.4V. The S-parameter measurements have indicated that the current gain and power gain cutoff frequencies of the device were 7 and 15 GHz, respectively. These values are among the best performance reported for GaAs based heterojunction FET's with a similar device geometry.

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