A Surface Generation Velocity Measurement Technique Using the Buried Channel MOS Structure

Buried Channel MOS 구조를 이용한 표면생성속도 측정 방법

A measurement technique of the surface generation velocity S$_o$ using the BC(buried channel) MOS structure with shallow and low doped channel layer (BC MOS S$_o$ measurement technique) is presented and verified analytically and experimentally. Using this measurement technique, S$_o$ can be measured more accurately than that measured using the gate-controlled diode SS1oT measurement technique. When S$_o$ is measured for the two techniques from a BC MOS structure test patten with gate length of 171$\mu$m, the results are 0,66cm/sec and 0.28cm/sec for the former and the latter respectively.