Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Fabrication of the Convex Structured MOSFET and Its Electrical Characteristics

Convex 구조를 갖는 MOSFET 소자의 제작 및 그 전기적 특성에 관한 연구

  • 김기홍 (금성 일렉트론주식회사) ;
  • 김현철 (금성 일렉트론주식회사) ;
  • 김흥식 (금성 일렉트론주식회사) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 1992.08.01
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Abstract

To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.

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