Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 29A Issue 9
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- Pages.36-45
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- 1992
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- 1016-135X(pISSN)
The Fabrication of (Ga, Al) As/GaAs Modified Multi-Quantum Well Laser Diode by MOCVD
MOCVD법에 의한 (Ga, Al) As/GaAs 변형된 영지우물 레이저 다이오드의 제작
- Kim, Chung-Jin (Dept. of Elec. Eng., Konkuk Univ.) ;
- Kang, Myung-Ku (Optical Electronics Lab., Hyundai Electronic) ;
- Kim, Yong (Semiconductor Materials Lab. KIST) ;
- Eom, Kyung-Sook (Semiconductor Materials Lab. KIST) ;
- Min, Suk-Ki (Semiconductor Materials Lab. KIST) ;
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Oh, Hwan-Sool
(Dept. of Elec. Eng., Konkuk Univ.)
- 김정진 (건국대학교 전자공학과) ;
- 강명구 (현대전자 광전자연구실) ;
- 김용 (한국과학기술연구원 반도체 재료 연구실) ;
- 엄경숙 (한국과학기술연구원 반도체 재료 연구실) ;
- 민석기 (한국과학기술연구원 반도체 재료 연구실) ;
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오환술
(건국대학교 전자공학과)
- Published : 1992.09.01
Abstract
The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of
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