Tunneling Current Contribution to RoA of $Hg_{1-x}Cd_{x}$Te Photodiodes

$Hg_{1-x}Cd_{x}$Te 광다이오드에서 터널링 전류가 RoA에 미치는 영향

RoA is an important figure of merits for estimating the performance of p-n junction infrared detectors. This paper presents the tunneling current contribution to RoA of $Hg_{1-x}Cd_{x}$Te n$^{+}$-p juction photodiodes. Then, a diffusion model, a thermal generation-recombination model, an indirect tunneling model via trap, and a band-to-band direct tunneling model are considered to calculate RoA. Using these models, RoA depending on temperature, doping concentration, and mole fraction is calculated. Also from these results, under various operating conditions the dominant dark current mechanisms cna be understood.