Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of the Recrystallized Poly Silicon nMOSFET and Its Electrical Characteristics

재결정화된 다결정 nMOSFET의 제작 및 그 전기적 특성

  • Kim, Joo-Young (Semiconductor R&D Lab., Hyundai Elec. Industries Co., Ltd.) ;
  • Kang, Moun-Sang (Dept. of Elec. Eng., Sogang Univ.) ;
  • Kim, Gi-Hong (Dept. of Elec. Eng., Sogang Univ.) ;
  • Ku, Yong-Seo (Dept. of Elec. Eng., Sogang Univ.) ;
  • An, Chul (Dept. of Elec. Eng., Sogang Univ.)
  • 김주영 (현대전자 반도체연구소) ;
  • 강문상 (서강대학교 전자공학과) ;
  • 김기홍 (서강대학교 전자공학과) ;
  • 구용서 (서강대학교 전자공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 1992.11.01
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Abstract

The technology of LOCOS(LOCal Oxidation of Silicon) was used to form the island of SOI film. After this, the SOI film was recrystallized by CO$_2$ laser and metal gate nMOSFETs were fabricated on this SOI film and their electrical characteristics were measured. The kink effect was not nearly observed and edge channel effect was found in the SOI nMOSFETs. The threshold voltage was about 0.5V, the electron mobility was about 340cm$^2$V$\cdot$S and an ON/OFF ratio above 10$^{5}$ was obtained at V_{DS}$=4V. The electrical characteristics were improved by laser recrystallization.

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